标题: | 12寸矽晶圆半导体VCD制程设备及BST介电薄膜成长研究---总计画(I) Research and Development of CVD Process Equipment for a 12-Inch Single Silicon Wafer and Growth of BST Dielectric Thin Film (I) |
作者: | 林清发 LIN TSING-FA 交通大学机械工程系 |
关键字: | CVD反应炉;薄膜成长;热流设计;矽晶圆;CVD reactor;Thin film growth;Thermel fluid design;Silicon wafer |
公开日期: | 2000 |
官方说明文件#: | NSC89-2212-E009-037 |
URI: | http://hdl.handle.net/11536/103100 https://www.grb.gov.tw/search/planDetail?id=501199&docId=90359 |
显示于类别: | Research Plans |
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