标题: 12寸矽晶圆半导体VCD制程设备及BST介电薄膜成长研究---总计画(I)
Research and Development of CVD Process Equipment for a 12-Inch Single Silicon Wafer and Growth of BST Dielectric Thin Film (I)
作者: 林清发
LIN TSING-FA
交通大学机械工程系
关键字: CVD反应炉;薄膜成长;热流设计;矽晶圆;CVD reactor;Thin film growth;Thermel fluid design;Silicon wafer
公开日期: 2000
官方说明文件#: NSC89-2212-E009-037
URI: http://hdl.handle.net/11536/103100
https://www.grb.gov.tw/search/planDetail?id=501199&docId=90359
显示于类别:Research Plans


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  1. 892212E009037.pdf

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