標題: Flexible non-volatile memory
作者: Liu Po-Tsun
Fan Yang-Shun
公開日期: 18-Mar-2014
摘要: A manufacturing method for manufacturing a flexible non-volatile memory is provided. The manufacturing method comprises the steps outlined below. A flexible substrate is provided. A planarization layer is formed on the flexible substrate. A metal bottom electrode layer is deposited on the planarization layer. A mask is formed to define a plurality of patterns. An AZTO layer having a plurality of electrically independent AZTO cells is deposited on the metal bottom electrode layer corresponding to the patterns. A top electrode layer is deposited on the AZTO layer corresponding to the AZTO cells to form a plurality of non-volatile memory cells.
官方說明文件#: H01L021/20
URI: http://hdl.handle.net/11536/104401
專利國: USA
專利號碼: 08673727
Appears in Collections:Patents


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