完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Huang Yeh-Jen | en_US |
| dc.contributor.author | Jou Yeh-Ning | en_US |
| dc.contributor.author | Ker Ming-Dou | en_US |
| dc.contributor.author | Chen Wen-Yi | en_US |
| dc.contributor.author | Hung Chia-Wei | en_US |
| dc.contributor.author | Chiou Hwa-Chyi | en_US |
| dc.date.accessioned | 2014-12-16T06:13:59Z | - |
| dc.date.available | 2014-12-16T06:13:59Z | - |
| dc.date.issued | 2013-08-13 | en_US |
| dc.identifier.govdoc | H01L029/74 | zh_TW |
| dc.identifier.govdoc | H01L031/111 | zh_TW |
| dc.identifier.govdoc | H01L023/62 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104454 | - |
| dc.description.abstract | An electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region. | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | Electrostatic discharge protection device | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | USA | zh_TW |
| dc.citation.patentnumber | 08507946 | zh_TW |
| 顯示於類別: | 專利資料 | |

