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dc.contributor.authorShirota Riichiroen_US
dc.contributor.authorWatanabe Hiroshien_US
dc.date.accessioned2014-12-16T06:15:02Z-
dc.date.available2014-12-16T06:15:02Z-
dc.date.issued2013-01-03en_US
dc.identifier.govdocH01L029/788zh_TW
dc.identifier.govdocG11C016/02zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105092-
dc.description.abstractAn application circuit and an operation method of a semiconductor device are provided. A leakage current among a control gate diffusion layer, a source diffusion layer and a drain is reduced by adjusting biases applied on a double well region, so as to reduce the product cost and improve the accuracy of a battery-less electronic timer that uses the semiconductor device.zh_TW
dc.language.isozh_TWen_US
dc.titleAPPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICEzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20130003466zh_TW
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