APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE

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DC Field	Value	Language
dc.contributor.author	Shirota Riichiro	en_US
dc.contributor.author	Watanabe Hiroshi	en_US
dc.date.accessioned	2014-12-16T06:15:02Z	-
dc.date.available	2014-12-16T06:15:02Z	-
dc.date.issued	2013-01-03	en_US
dc.identifier.govdoc	H01L029/788	zh_TW
dc.identifier.govdoc	G11C016/02	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105092	-
dc.description.abstract	An application circuit and an operation method of a semiconductor device are provided. A leakage current among a control gate diffusion layer, a source diffusion layer and a drain is reduced by adjusting biases applied on a double well region, so as to reduce the product cost and improve the accuracy of a battery-less electronic timer that uses the semiconductor device.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20130003466	zh_TW
Appears in Collections:	Patents

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