METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

標題:	METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
作者:	Wu YewChung Sermon Wang Bau-Ming Hsiao Feng-Ching
公開日期:	13-九月-2012
摘要:	The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
官方說明文件#:	H01L021/20 H01L021/26
URI:	http://hdl.handle.net/11536/105133
專利國:	USA
專利號碼:	20120231614
顯示於類別：	專利資料

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