標題: Method of semiconductor manufacturing process
作者: Wu YewChung Sermon
Wang Bau-Ming
Hsiao Feng-Ching
公開日期: 9-十二月-2014
摘要: The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
官方說明文件#: H01L021/30
H01L021/46
H01L021/02
H01L021/18
H01L033/00
URI: http://hdl.handle.net/11536/104323
專利國: USA
專利號碼: 08906778
顯示於類別:專利資料


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