| 標題: | Method of semiconductor manufacturing process |
| 作者: | Wu YewChung Sermon Wang Bau-Ming Hsiao Feng-Ching |
| 公開日期: | 9-Dec-2014 |
| 摘要: | The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate. |
| 官方說明文件#: | H01L021/30 H01L021/46 H01L021/02 H01L021/18 H01L033/00 |
| URI: | http://hdl.handle.net/11536/104323 |
| 專利國: | USA |
| 專利號碼: | 08906778 |
| Appears in Collections: | Patents |
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