METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS

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DC Field	Value	Language
dc.contributor.author	Wu YewChung Sermon	en_US
dc.contributor.author	Wang Bau-Ming	en_US
dc.contributor.author	Hsiao Feng-Ching	en_US
dc.date.accessioned	2014-12-16T06:15:06Z	-
dc.date.available	2014-12-16T06:15:06Z	-
dc.date.issued	2012-09-13	en_US
dc.identifier.govdoc	H01L021/20	zh_TW
dc.identifier.govdoc	H01L021/26	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105133	-
dc.description.abstract	The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20120231614	zh_TW
Appears in Collections:	Patents

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