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dc.contributor.authorHUANG Yeh-Jenen_US
dc.contributor.authorJou Yeh-Ningen_US
dc.contributor.authorKer Ming-Douen_US
dc.contributor.authorChen Wen-Yien_US
dc.contributor.authorHung Chia-Weien_US
dc.contributor.authorChiou Hwa-Chyien_US
dc.date.accessioned2014-12-16T06:15:12Z-
dc.date.available2014-12-16T06:15:12Z-
dc.date.issued2012-06-14en_US
dc.identifier.govdocH01L023/62zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/105171-
dc.description.abstractAn electrostatic discharge (ESD) protection device including a substrate, a first doped region, a second doped region, and a third doped region, a gate and a plurality of contacts is disclosed. The substrate includes a first conductive type. The first doped region is formed in the substrate and includes a second conductive type. The second doped region is formed in the substrate and includes the second conductive type. The third doped region is formed in the substrate, includes the first conductive type and is located between the first and the second doped regions. The gate is formed on the substrate, located between the first and the second doped regions and comprises a first through hole. The contacts pass through the first through hole to contact with the third doped region.zh_TW
dc.language.isozh_TWen_US
dc.titleELECTROSTATIC DISCHARGE PROTECTION DEVICEzh_TW
dc.typePatentsen_US
dc.citation.patentcountryUSAzh_TW
dc.citation.patentnumber20120146151zh_TW
Appears in Collections:Patents


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