METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	TSENG Tseung-Yuen	en_US
dc.contributor.author	Wang Sheng-Yu	en_US
dc.contributor.author	Tsai Chen-Han	en_US
dc.date.accessioned	2014-12-16T06:15:24Z	-
dc.date.available	2014-12-16T06:15:24Z	-
dc.date.issued	2011-07-14	en_US
dc.identifier.govdoc	H01L045/00	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/105283	-
dc.description.abstract	A method for fabricating a resistor for a resistance random access memory (RRAM) includes: (a) forming a first electrode over a substrate; (b) forming a variable resistance layer of zirconium oxide on the first electrode under a working temperature, which ranges from 175° C. to 225° C.; and (c) forming a second electrode of Ti on the variable resistance layer.	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	METHOD FOR FABRICATING A RESISTOR FOR A RESISTANCE RANDOM ACCESS MEMORY	zh_TW
dc.type	Patents	en_US
dc.citation.patentcountry	USA	zh_TW
dc.citation.patentnumber	20110171811	zh_TW
顯示於類別：	專利資料

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。