OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

標題:	OHMIC CONTACT OF III-V SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
作者:	CHANG, Edward Yi KUO, Chien-I CHANG, Chun-Yen
公開日期:	21-Apr-2011
摘要:	Heavily doped epitaxial SiGe material or epitaxial InxGa1-xAs are used to form the source and drain of III-V semiconductor device to apply stress to the channel of III-V semiconductor device. Therefore, the electron mobility can be increased.
官方說明文件#:	H01L029/778 H01L021/335
URI:	http://hdl.handle.net/11536/105312
專利國:	USA
專利號碼:	20110089467
Appears in Collections:	Patents

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