Method for forming required pattern on semiconductor substrate by thermal reflow technique

標題:	Method for forming required pattern on semiconductor substrate by thermal reflow technique
作者:	Chang, Yi Edward Chang, Chia-Ta Hsiao, Shih-Kuang
公開日期:	24-Jun-2010
摘要:	The invention is disclosed that pattern on semiconductor substrate is fabricated by thermal reflow technique. Also, the pattern on semiconductor substrate having different sub-micron spacings can be fabricated by using different time for the thermal reflow technique process.
官方說明文件#:	H01L021/3065
URI:	http://hdl.handle.net/11536/105397
專利國:	USA
專利號碼:	20100159708
Appears in Collections:	Patents

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