Silicon controlled rectifier for the electrostatic discharge protection

標題:	Silicon controlled rectifier for the electrostatic discharge protection
作者:	Ker, Ming-Dou Lin, Kun-Hsien
公開日期:	8-十二月-2005
摘要:	The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.
官方說明文件#:	H02H009/00
URI:	http://hdl.handle.net/11536/105719
專利國:	USA
專利號碼:	20050270710
顯示於類別：	專利資料

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