標題: | Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers |
作者: | Yang, Hung-Pin D. Chen, I-Liang Lee, Chen-Hong Chiou, Chih-Hong Lee, Tsin-Dong Hsu, I-Chen Lai, Fang-I Lin, Gray Kuo, Hao-Chung Chi, Jim Y. 光電工程學系 Department of Photonics |
關鍵字: | InGaAs;highly strained;VCSEL |
公開日期: | 1-六月-2007 |
摘要: | We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed. |
URI: | http://dx.doi.org/10.1143/JJAP.46.L509 http://hdl.handle.net/11536/10720 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.46.L509 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS |
Volume: | 46 |
Issue: | 20-24 |
起始頁: | L509 |
結束頁: | L511 |
顯示於類別: | 期刊論文 |