Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers

Title:	Highly strained InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers
Authors:	Yang, Hung-Pin D. Chen, I-Liang Lee, Chen-Hong Chiou, Chih-Hong Lee, Tsin-Dong Hsu, I-Chen Lai, Fang-I Lin, Gray Kuo, Hao-Chung Chi, Jim Y. 光電工程學系 Department of Photonics
Keywords:	InGaAs;highly strained;VCSEL
Issue Date:	1-Jun-2007
Abstract:	We report our results on the highly strained InGaAs/GaAs quantum well (QW) vertical-cavity surface-emitting lasers (VCSELs) in the 1140 to 1250 nm range. The epitaxial structures were grown on (100)GaAs substrates by metal-organic chemical vapor deposition (MOCVD). A maximum output power of more than 6.3 mW has been demonstrated. The spectral characteristics were also measured and analyzed.
URI:	http://dx.doi.org/10.1143/JJAP.46.L509 http://hdl.handle.net/11536/10720
ISSN:	0021-4922
DOI:	10.1143/JJAP.46.L509
Journal:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume:	46
Issue:	20-24
Begin Page:	L509
End Page:	L511
Appears in Collections:	Articles

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