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dc.contributor.authorYang, F. M.en_US
dc.contributor.authorChang, T. C.en_US
dc.contributor.authorLiu, P. T.en_US
dc.contributor.authorYeh, P. H.en_US
dc.contributor.authorChen, U. S.en_US
dc.contributor.authorYu, Y. C.en_US
dc.contributor.authorLin, J. Y.en_US
dc.contributor.authorSze, S. M.en_US
dc.contributor.authorLou, J. C.en_US
dc.date.accessioned2014-12-08T15:14:01Z-
dc.date.available2014-12-08T15:14:01Z-
dc.date.issued2007-05-21en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2742573en_US
dc.identifier.urihttp://hdl.handle.net/11536/10790-
dc.description.abstractThe nonvolatile memory device with multilayer nanocrystals has advantages such as the memory effects can be increased by the increasing density of the nanocrystals and the whole retention characteristic can be improved. There are much more electrons that can be stored in the double layer than single layer nanocrystal memory device. The double layer CoSi2 nanocrystals have better retention characteristic than the single layer. The good retention characteristic of the double layer device is due to the Coulomb-blockage effects on the top layer nanocrystals from the bottom layer nanocrystals. So, the memory effects of the nonvolatile memory device can be improved by using the double layer nanocrystals. (c) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleUsing double layer CoSi2 nanocrystals to improve the memory effects of nonvolatile memory devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2742573en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume90en_US
dc.citation.issue21en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000246775900040-
dc.citation.woscount33-
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