Title: | Effect of gate sinking on the device performance, of the InGaP/AlGaAs/InGaAs enhancement-mode PHEMT |
Authors: | Chu, L. H. Chang, E. Y. Chang, L. Wu, Y. H. Chen, S. H. Hsu, H. T. Lee, T. L. Lien, Y. C. Chang, C. Y. 材料科學與工程學系 電子工程學系及電子研究所 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
Keywords: | buried gate;enhancement-mode (E-mode);InGaP;platinum (Pt);pseudomorphic high-electron. mobility transistor (PHEMT);single voltage supply |
Issue Date: | 1-Feb-2007 |
Abstract: | An enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high-electron mobility transistor using platinum (Pt) as the Schottky contact metal was investigated for the first time. Following the Pt/Ti/Pt/Au gate metal deposition, the devices were thermally annealed at 325 degrees C for gate sinking. After the annealing, the device showed a positive threshold voltage (V-th) shift from 0.17 to 0.41 V and a very low drain leakage current from 1.56 to 0.16 mu A/mm. These improvements are attributed to the Schottky barrier height increase and the decrease of the gate-to-channel distance as Pt sinks into the InGaP Schottky layer during gate-sinking process. The shift in the V-th was very uniform across a 4-in wafer and was reproducible from wafer to wafer. The device also showed excellent RF power performance after the gate-sinking process. |
URI: | http://dx.doi.org/10.1109/LED.2006.889238 http://hdl.handle.net/11536/11175 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2006.889238 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 28 |
Issue: | 2 |
Begin Page: | 82 |
End Page: | 85 |
Appears in Collections: | Articles |
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