標題: Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
作者: Chen, Jian Hao
Huang, Tzung Bin
Wu, Xiaohua
Landheer, Dolf
Lei, Tan Fu
Chao, Tien Sheng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N-2(+), ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced the leakage currents and improved the breakdown characteristics but the N2O-plasma treatment produced the best-behaved C-V curves, when compared to the untreated control samples. (c) 2006 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11327
http://dx.doi.org/10.1149/1.2388733
ISSN: 0013-4651
DOI: 10.1149/1.2388733
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 1
起始頁: G18
結束頁: G23
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