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dc.contributor.authorChiang, K. C.en_US
dc.contributor.authorLin, J. W.en_US
dc.contributor.authorPan, H. C.en_US
dc.contributor.authorHsiao, C. N.en_US
dc.contributor.authorChen, W. J.en_US
dc.contributor.authorKao, H. L.en_US
dc.contributor.authorHsieh, I. J.en_US
dc.contributor.authorChin, Alberten_US
dc.date.accessioned2014-12-08T15:15:04Z-
dc.date.available2014-12-08T15:15:04Z-
dc.date.issued2007en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/11330-
dc.identifier.urihttp://dx.doi.org/10.1149/1.2431323en_US
dc.description.abstractWe demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.en_US
dc.language.isoen_USen_US
dc.titleVery high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.2431323en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume154en_US
dc.citation.issue3en_US
dc.citation.spageH214en_US
dc.citation.epageH216en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000243977500076-
dc.citation.woscount9-
Appears in Collections:Articles


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