Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications

doi:10.1149/1.2431323

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DC 欄位	值	語言
dc.contributor.author	Chiang, K. C.	en_US
dc.contributor.author	Lin, J. W.	en_US
dc.contributor.author	Pan, H. C.	en_US
dc.contributor.author	Hsiao, C. N.	en_US
dc.contributor.author	Chen, W. J.	en_US
dc.contributor.author	Kao, H. L.	en_US
dc.contributor.author	Hsieh, I. J.	en_US
dc.contributor.author	Chin, Albert	en_US
dc.date.accessioned	2014-12-08T15:15:04Z	-
dc.date.available	2014-12-08T15:15:04Z	-
dc.date.issued	2007	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11330	-
dc.identifier.uri	http://dx.doi.org/10.1149/1.2431323	en_US
dc.description.abstract	We demonstrate a high-performance TaN/SrTiO3/TaN metal-insulator- metal (MIM) radio-frequency (rf) capacitor with good device integrity of very high capacitance density of 44 fF/mu m(2), small voltage linearity alpha of 54 ppm/V-2 at 2 GHz, and a small capacitance reduction 3.5% from 100 KHz to 10 GHz. Such large capacitance density can largely reduce the device size used in rf integrated circuits. (c) 2007 The Electrochemical Society.	en_US
dc.language.iso	en_US	en_US
dc.title	Very high density (44 fF/mu m(2)) SrTiO3 MIM capacitors for RF applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1149/1.2431323	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	154	en_US
dc.citation.issue	3	en_US
dc.citation.spage	H214	en_US
dc.citation.epage	H216	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000243977500076	-
dc.citation.woscount	9	-
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