標題: Fabrication of SONOS-type flash memory with the binary high-k dielectrics by the sol-gel spin coating method
作者: Ko, Fu-Hsiang
You, Hsin-Chiang
Chang, Chun-Ming
Yang, Wen-Luh
Lei, Tan-Fu
材料科學與工程學系奈米科技碩博班
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: We fabricated the binary high-k (HfxZr1-xO2) nanocrystal memory using a very simple sol-gel spin coating method and 900 degrees C 60 s rapid thermal annealing (RTA). From the transmission electron microscopy identification, the nanocrystals were formed as the monolayered charge trapping site after 900 degrees C 60 s RTA and the size was ca. 5 nm. We verified the electrical properties in terms of program-erase speed, charge retention, and endurance. The sol-gel device exhibited the long charge retention time of 10(4) s with only 2.5% charge loss, and good endurance performance for program/erase cycles up to 10(5). (c) 2007 The Electrochemical Society.
URI: http://hdl.handle.net/11536/11331
http://dx.doi.org/10.1149/1.2433705
ISSN: 0013-4651
DOI: 10.1149/1.2433705
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 154
Issue: 4
起始頁: H268
結束頁: H270
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