標題: New understanding of metal-insulator-metal (MIM) capacitor degradation behavior
作者: Hung, Chi-Chao
Oates, Anthony S.
Lin, H. C.
Chang, Percy
Wang, J. L.
Huang, C. C.
Yau, Y. W.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: MIM capacitor;capacitance degradation;charge trapping;metal-insulator interlayer
公開日期: 2007
摘要: This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
URI: http://hdl.handle.net/11536/11434
http://dx.doi.org/10.1109/RELPHY.2007.369985
ISBN: 978-1-4244-0918-1
DOI: 10.1109/RELPHY.2007.369985
期刊: 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL
起始頁: 630
結束頁: 631
Appears in Collections:Conferences Paper


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