標題: The impact of deep Ni salicidation and NH3 plasma treatment on nano-SOI FinFETs
作者: You, Hsin-Chiang
Kuo, Po-Yi
Ko, Fu-Hsiang
Chao, Tien-Sheng
Lei, Tan-Fu
材料科學與工程學系奈米科技碩博班
電子物理學系
電子工程學系及電子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: deep Ni salicidation;drain-induced barrier lowering (DIBL);floating-body effect;NH3 plasma;subthreshold slope (SS)
公開日期: 1-Oct-2006
摘要: In this letter, 50-nm gate-length nano-silicon-on-insulator FinFETs with deep Ni salicidation and NH3 plasma treatment are fabricated. It is found that device performances, including subthreshold slope (SS) drain-induced barrier lowering (DIBL) and OFF-state leakage current, can be greatly improved by using deep Ni salicidation process compared to no Ni salicidation process. The deep Ni-salicided devices effectively suppress the floating-body effect and parasitic bipolar junction. transistor action. In addition, the effect of NH3 plasma on the deep Ni-salicided devices is discussed. Experimental results reveal that the devices under a new state-of-the-art NH3 plasma process can achieve better performance such as an SS of 66 mV/dec and a DIBL of 0.03 V.
URI: http://dx.doi.org/10.1109/LED.2006.882519
http://hdl.handle.net/11536/11749
ISSN: 0741-3106
DOI: 10.1109/LED.2006.882519
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 27
Issue: 10
起始頁: 799
結束頁: 801
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