Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate

doi:10.1063/1.2337770

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DC 欄位	值	語言
dc.contributor.author	Hsieh, Y. C.	en_US
dc.contributor.author	Chang, E. Y.	en_US
dc.contributor.author	Luo, G. L.	en_US
dc.contributor.author	Chen, S. H.	en_US
dc.contributor.author	Biswas, Dhrubes	en_US
dc.contributor.author	Wang, S. Y.	en_US
dc.contributor.author	Chang, C. Y.	en_US
dc.date.accessioned	2014-12-08T15:15:48Z	-
dc.date.available	2014-12-08T15:15:48Z	-
dc.date.issued	2006-09-15	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.2337770	en_US
dc.identifier.uri	http://hdl.handle.net/11536/11775	-
dc.description.abstract	Self-assembled In0.22Ga0.78As quantum dots (QDs) grown on Si substrate with Ge/SiGe as buffer layer grown by metal organic vapor phase epitaxy were investigated. Transmission electron microscopy and atomic force microscopy images were used to observe the size and space distribution of the In0.22Ga0.78As QDs grown on the GaAs/Ge/GeSi/Si layer structure. The influence of the growth temperature on the QDs size and density distribution was investigated. For QDs grown at 450 degrees C, the density of the In0.22Ga0.78As dots was estimated to be 1x10(11) cm(-2) and the In0.22Ga0.78As QDs thickness was 5 ML (monolayer) thick. (c) 2006 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Self-assembled In0.22Ga0.78As quantum dots grown on metamorphic GaAs/Ge/SixGe1-x/Si substrate	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.2337770	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	100	en_US
dc.citation.issue	6	en_US
dc.citation.epage		en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000240876600115	-
dc.citation.woscount	4	-
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