標題: | High-performance TFTs with Si nanowire channels enhanced by metal-induced lateral crystallization |
作者: | Su, CJ Lin, HC Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | metal-induced lateral crystallization (MILC);nanowires (NWs);thin-film transistors (TFTs) |
公開日期: | 1-Jul-2006 |
摘要: | Thin-film transistors with poly-Si nanowire (NW) channels enhanced by metal-induced lateral crystallization (MILC) are reported. The new device features a side-gate with self-aligned NW channels abutting the sidewalls of the gate structure. By adopting the MILC technique, the crystallinity of the NW channels is greatly enhanced, compared to those formed by solid-phase crystallization. As a result, the electrical performance of the devices could be significantly enhanced in terms of reduced subthreshold swing and threshold voltage as well as improved field-effect mobility. |
URI: | http://dx.doi.org/10.1109/LED.2006.877708 http://hdl.handle.net/11536/12075 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2006.877708 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 27 |
Issue: | 7 |
起始頁: | 582 |
結束頁: | 584 |
Appears in Collections: | Articles |
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