標題: Characterization of the low temperature activated P+/N junction formed by implant into silicide method
作者: Chang, Kow-Ming
Lin, Jian-Hong
Yang, Chih-Hsiang
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
URI: http://hdl.handle.net/11536/12078
ISBN: 978-1-4244-1891-6
期刊: 2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2
起始頁: 640
結束頁: 641
Appears in Collections:Conferences Paper