標題: | 2H-Silicon Carbide Epitaxial Growth on c-Plane Sapphire Substrate Using an AlN Buffer Layer and Effects of Surface Pre-Treatments |
作者: | Luong, Tien-Tung Binh Tinh Tran Ho, Yen-Teng Wei, Ting-Wei Wu, Yue-Han Yen, Tzu-Chun Wei, Lin-Lung Maa, Jer-Shen Chang, Edward Yi 材料科學與工程學系 光電學院 電子工程學系及電子研究所 Department of Materials Science and Engineering College of Photonics Department of Electronics Engineering and Institute of Electronics |
關鍵字: | AlN buffer;hydrogen pre-treatment;carbonization;XRD phi-scan;2H-SiC |
公開日期: | 1-May-2015 |
摘要: | The effects of surface pre-treatments and the role of an AN buffer layer for 2H-SiC growth on c-plane sapphire substrates by thermal CVD are investigated. While the crystallinity of SiC directly grown on sapphire substrate always degrades with a hydrogen pre-treatment but improves by optimizing carbonization, the crystallinity of SiC grown on sapphire substrate using an AN buffer grown by MOCVD improves with sufficient time of exposure to the H pre-treatment but always deteriorates with carbonization. Detailed microstructural analysis by phi-scan x-ray diffraction reveals that SiC film grown on sapphire substrate consists of crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60 degrees. A highly oriented hexagonal 2H-SiC film is obtained on low-cost c-plane sapphire substrate by using an AN buffer. 2H-SiC is unambiguously determined not only by phi-scan x-ray diffraction but also by high-resolution transmission electron microscopy. The growth relationship between 2H-SiC and 2H-AlN are coherent due to the favorable bonding of C and Al between SiC and AlN. |
URI: | http://dx.doi.org/10.1007/s13391-015-4208-9 http://hdl.handle.net/11536/124836 |
ISSN: | 1738-8090 |
DOI: | 10.1007/s13391-015-4208-9 |
期刊: | ELECTRONIC MATERIALS LETTERS |
Volume: | 11 |
起始頁: | 352 |
結束頁: | 359 |
Appears in Collections: | Articles |