標題: | Overview on electrostatic discharge protection designs for mixed-voltage I/O interfaces: Design concept and circuit implementations |
作者: | Ker, MD Lin, KH 電機學院 College of Electrical and Computer Engineering |
關鍵字: | electrostatic discharge (ESD);ESD protection design;gate-oxide reliability;high-voltage tolerant;mixed-voltage I/O interfaces;power-rail ESD clamp circuit |
公開日期: | 1-二月-2006 |
摘要: | Electrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nano-scale CMOS processes. The on-chip ESD protection circuit for mixed-voltage I/O interfaces should meet the gate-oxide reliability constraints and prevent the undesired leakage current paths. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification and analysis of ESD protection designs for mixed-voltage I/O interfaces, and the designs of high-voltage-tolerant power-rail ESD clamp circuit are presented and discussed. |
URI: | http://dx.doi.org/10.1109/TCSI.2005.856040 http://hdl.handle.net/11536/12651 |
ISSN: | 1057-7122 |
DOI: | 10.1109/TCSI.2005.856040 |
期刊: | IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS |
Volume: | 53 |
Issue: | 2 |
起始頁: | 235 |
結束頁: | 246 |
顯示於類別: | 期刊論文 |