0.18微米製程之低導通電阻700伏特橫向雙擴散場效電晶體設計

Title:	0.18微米製程之低導通電阻700伏特橫向雙擴散場效電晶體設計 Design of 700V LDMOSFET with Low Rds(on) in 0.18um Technology
Authors:	郭明奇 Kuo, Ming-Chi 趙昌博 Chao, Chang-Po 電機學院電機與控制學程
Keywords:	橫向雙擴散金氧半場效電晶體;LDMOS
Issue Date:	2015
URI:	http://140.113.39.130/cdrfb3/record/nctu/#GT079867516 http://hdl.handle.net/11536/126751
Appears in Collections:	Thesis