完整後設資料紀錄
DC 欄位語言
dc.contributor.authorTsai, Hui-Wenen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2015-12-02T02:59:12Z-
dc.date.available2015-12-02T02:59:12Z-
dc.date.issued2015-06-01en_US
dc.identifier.issn1530-4388en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TDMR.2015.2424377en_US
dc.identifier.urihttp://hdl.handle.net/11536/127918-
dc.description.abstractThe robustness against latch-up in the integrated circuits can be improved by supporting complementary current at the pad under the latch-up current test (I-test). By inserting additional junctions to form parasitic bipolar sensors, the external trigger can be monitored, and the ESD protection devices can be applied to provide such current and decrease the related perturbation to the internal circuits. The proposed design and the previous work with a single guard ring have been fabricated in the same 0.5-mu m 5-V process. The experimental results confirm the enhanced latch-up tolerance of this work and the practicability in the SOC era.en_US
dc.language.isoen_USen_US
dc.subjectLatch-upen_US
dc.subjectelectrostatic discharge (ESD) protectionen_US
dc.subjectguard ringen_US
dc.titleLatch-Up Protection Design With Corresponding Complementary Current to Suppress the Effect of External Current Triggersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TDMR.2015.2424377en_US
dc.identifier.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITYen_US
dc.citation.volume15en_US
dc.citation.spage242en_US
dc.citation.epage249en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000356174400016en_US
dc.citation.woscount0en_US
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