標題: Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes
作者: Wang, Sheng-Wen
Lin, Da-Wei
Lee, Chia-Yu
Liu, Che-Yu
Lan, Yu-Pin
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
公開日期: 1-Jan-2013
摘要: In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.
URI: http://hdl.handle.net/11536/128507
ISBN: 978-1-55752-973-2
ISSN: 2160-9020
期刊: 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:Conferences Paper