標題: | Effect of InGaN/GaN Multiple Quantum Wells with p-n Quantum Barriers on Efficiency Droop in Blue Light-emitting Diodes |
作者: | Wang, Sheng-Wen Lin, Da-Wei Lee, Chia-Yu Liu, Che-Yu Lan, Yu-Pin Kuo, Hao-Chung Wang, Shing-Chung 光電工程學系 Department of Photonics |
公開日期: | 1-一月-2013 |
摘要: | In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs). The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed. |
URI: | http://hdl.handle.net/11536/128507 |
ISBN: | 978-1-55752-973-2 |
ISSN: | 2160-9020 |
期刊: | 2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) |
顯示於類別: | 會議論文 |