Low-threshold-current-density, long-wavelength, highly strained InGaAs laser grown by metalorganic chemical vapor deposition

Abstract

A long-emission-wavelength laser with multiple InGaAs/GaAs quantum wells without a strain-compensated barrier was grown by metalorganic chemical vapor deposition (MOCVD). InGaAs quantum well (QW) broad-area laser diodes with an emission wavelength of up to 1214 nm were realized. A measured room-temperature threshold current density of only 173 A/cm(2) for a 2-mm-cavity device and a transparency current density of 66 A/cm(2) were obtained. The internal quantum efficiency and laser cavity loss were 67% and 6 cm(-1), respectively.