Title: Effects of the Variation of Ferroelectric Properties on Negative Capacitance FET Characteristics
Authors: Lin, Cheng-I
Khan, Asif Islam
Salahuddin, Sayeef
Hu, Chenming
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: Ferroelectric;negative capacitance FET (NCFET);sub-60 mV/decade
Issue Date: May-2016
Abstract: We study the effects of the variation of ferroelectric material properties (thickness, polarization, and coercivity) on the performance of negative capacitance FETs (NCFETs). Based on this, we propose the concept of conservative design of NCFETs, where any unintentional yet reasonable and simultaneous variation (similar to +/- 3%) in ferroelectric parameters does not result in the emergence of hysteresis and causes only a reasonable variation in the ON-current (<= 5%) and, within these constraints, the enhancement of ON-current due to the addition of the ferroelectric gate oxide, which is is maximized.
URI: http://dx.doi.org/10.1109/TED.2016.2514783
http://hdl.handle.net/11536/133640
ISSN: 0018-9383
DOI: 10.1109/TED.2016.2514783
Journal: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 63
Issue: 5
Begin Page: 2197
End Page: 2199
Appears in Collections:Articles