標題: Adjustable built-in resistor on oxygen-vacancy-rich electrode-capped resistance random access memory
作者: Pan, Chih-Hung
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Chu, Tian-Jian
Chen, Po-Hsun
Chen, Min-Chen
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: Oct-2016
摘要: In this study, an adjustable built-in resistor was observed on an indium-tin oxide (ITO)-capped resistance random access memory (RRAM) device, which has the potential to reduce operating power. Quite notably, the high-resistance state (HRS) current of the device decreased with decreasing current compliance, and a special situation, that is, a gradual change in current always appears and climbs slowly to reach the compliance current in the set process even when the compliance current decreases, was observed. Owing to this observed phenomenon, the device is regarded to be equipped with an adjustable built-in resistor, which has the potential for low-power device application. (C) 2016 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.9.104201
http://hdl.handle.net/11536/134210
ISSN: 1882-0778
DOI: 10.7567/APEX.9.104201
期刊: APPLIED PHYSICS EXPRESS
Volume: 9
Issue: 10
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