Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment

Title:	Contact resistance reduction on layered MoS2 by Ar plasma pre-treatment
Authors:	Ho, Yen-Teng Chu, Yung-Ching Jong, Chao An Chen, Hung-Yi Lin, Meng-Wei Zhang, Ming Chien, Po-Yen Tu, Yung-Yi Woo, Jason Chang, Edward Yi 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	2016
Abstract:	The effect of resistance (Rc) reduction of Ti/Au contact on MoS2 by ICP Ar plasma pretreatment is presented. The lowest Rc of 1.72 ohm-cm was achieved with the ICP treatment condition of 50W (ICP) /2W (chuck) for 10 sec. Compared with the contact without treatment (19.6 ohm-cm), the Rc improves over 10 times, demonstrating the advantage of Ar plasma pre-treatment on MoS2 contact.
URI:	http://hdl.handle.net/11536/134673
ISBN:	978-1-5090-0726-4
Journal:	2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
Begin Page:	52
End Page:	53
Appears in Collections:	Conferences Paper