Novel Ultra-Low Power RRAM with Good Endurance and Retention

doi:10.1109/VLSIT.2010.5556180

標題:	Novel Ultra-Low Power RRAM with Good Endurance and Retention
作者:	Cheng, C. H. Chin, Albert Yeh, F. S. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2010
摘要:	We report high performance RRAM of ultra-low 4 mu W set power (-3.5 mu A at -1.1 V), 16 pW reset power (0.12 nA at 0.13 V), large extrapolated 10-year on/off retention window of 4x10(5) at 85 degrees C, good 10(6) cycling endurance and fast 50 ns switching for the first time. These were achieved using novel covalent-bond-dielectric/metal-oxide and low cost electrodes.
URI:	http://dx.doi.org/10.1109/VLSIT.2010.5556180 http://hdl.handle.net/11536/134863
ISBN:	978-1-4244-7637-4
DOI:	10.1109/VLSIT.2010.5556180
期刊:	2010 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS
起始頁:	85
結束頁:	+
Appears in Collections:	Conferences Paper