標題: | Performance and reliability of poly-Si TFTs on FSG buffer layer |
作者: | De Wang, S Chang, TY Chien, CH Lo, WH Sang, JY Lee, JW Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | buffer layer;fluorine;fluorinated silicate oxide (FSG);polycrystalline silicon thin-film transistors (poly-Si TFTs);reliability |
公開日期: | 1-七月-2005 |
摘要: | A novel and process-compatible scheme for fabricating poly-Si thin-film transistors (TFTs) on an FSG buffer layer was proposed and demonstrated. Experimental results reveal that remarkably improved device performance and uniformity can be achieved with appropriate fluorine concentration. The poly-Si TFTs fabricated on FSG layers have a higher on-current, a lower leakage current, and a higher field-effect mobility compared with the conventional poly-Si TFTs. Furthermore, the incorporation of fluorine also increased the reliability of poly-Si TFTs against hot carrier stressing, which is attributed to the formation of Si-F bonds. |
URI: | http://dx.doi.org/10.1109/LED.2005.851242 http://hdl.handle.net/11536/13557 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.851242 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 7 |
起始頁: | 467 |
結束頁: | 469 |
顯示於類別: | 期刊論文 |