完整後設資料紀錄
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dc.contributor.authorTsai, Hui-Wenen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2017-04-21T06:49:05Z-
dc.date.available2017-04-21T06:49:05Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9877-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/135943-
dc.description.abstractA circuit solution to generate compensation current that can decrease the perturbation induced by the external latchup trigger was proposed. The robustness against latchup can be improved by supporting compensation current at the pad under latch-up current test. By inserting additional junctions to sense the latchup trigger current, the injected latchup trigger current can be detected, and then the I/O or ESD-protection devices are used to generate the compensation current that decrease the perturbation to the internal circuits. The proposed design has been successfully verified in a 0.5-mu m BCD process to improve latchup immunity.en_US
dc.language.isoen_USen_US
dc.subjectLatchupen_US
dc.subjectelectrostatic discharge (ESD) protectionen_US
dc.subjectguard ringen_US
dc.titleCompensation Circuit with Additional Junction Sensor to Enhance Latchup Immunity for CMOS Integrated Circuitsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2015 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD)en_US
dc.citation.spage256en_US
dc.citation.epage259en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380498200111en_US
dc.citation.woscount0en_US
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