Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate

標題:	Low-threshold InGaAs/GaAsSb \'W\'-type quantum well laser on InP substrate
作者:	Chang, Chia-Hao Li, Zong-Lin Lu, Hong-Ting Lee, Chien-Ping Lin, Sheng-Di 電機學院電子工程學系及電子研究所 College of Electrical and Computer Engineering Department of Electronics Engineering and Institute of Electronics
公開日期:	2014
摘要:	The mid-infrared electrically-driven laser using InGaAs/GaAsSb \'W\'-type QWs is demonstrated at room temperature. The InP-based laser lasing at 2.35 mu m with the lowest threshold current density of 1.42 kA/cm(2) is presented.
URI:	http://hdl.handle.net/11536/136151
ISSN:	2160-9020
期刊:	2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)
Appears in Collections:	Conferences Paper