標題: Flexible InGaZnO TFTs with Stacked GeO2/TiO2 Gate Dielectrics
作者: Hsu, Hsiao-Hsuan
Chang, Chun-Yen
Cheng, Chun-Hu
Yu, Shu-Hung
Su, Ching-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: thin film transistor (TFT);flexible;GeO2;TiO2
公開日期: 2013
摘要: We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm(2)/Vs, and a good I-on/I-off ratio of 3.7x10(5). The flexible TFT with low operation voltage and high drive current could be attributed to the combined effect of flat plastic substrate, large band-gap GeO2 and higher-kappa TiO2.
URI: http://hdl.handle.net/11536/136159
ISBN: 978-1-4673-2523-3
期刊: 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
Appears in Collections:Conferences Paper