標題: Study of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technology
作者: Huang, Yu-Hsiang
Liang, Hao-Wen
Cheng, Chuan-An
Lin, Chien-Hung
Lee, Chia-Lin
Yang, Shan-Chun
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.
URI: http://dx.doi.org/10.1109/ECTC.2016.308
http://hdl.handle.net/11536/136268
ISBN: 978-1-5090-1204-6
ISSN: 0569-5503
DOI: 10.1109/ECTC.2016.308
期刊: 2016 IEEE 66TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC)
起始頁: 2547
結束頁: 2552
Appears in Collections:Conferences Paper