有機垂直式電晶體陣列之設計與製程

Abstract

本碩論著重於垂直式空間電荷限制電晶體(SCLT)於陣列上之設計與製程，可分成兩部分。在第一部分，設計驅動有機發光二極體之SCLT陣列，並在大面積標準元件製程中，做出良好開關特性之標準元件，成功說明此SCLT驅動陣列製程的可行性。 第二部分，若要將SCLT應用於顯示器規格之尺度，將面臨多層蒸鍍遮罩對位造成之誤差問題，故本實驗室首度採用微影製程製作SCLT，先以標準元件之圖案著手，嘗試出可行之微影製程參數，並在最困難的金屬網格結構製作中，試驗了三種不同之方法，選用當中較可行的正電球塗佈，成功做出具有相當電性之SCLT，且同時設計在3cm×4cm玻璃基板上有24顆主動區大小為80µm2之SCLT製程。

This thesis is about the design and fabrication of vertical organic transistor arrays (SCLT). There are two parts in the thesis. First, we design SCLT arrays for driving OLED. In order to illustrate the fabrication feasibility of the design, we develop a high on/off current ratio large area SCLT. Second, if we want to make the SCLT in the scale of displays, we will face difficulty in the alignment of multiple layers of shadow masks. Therefore, we attempt to use lithography for fabricating the electrodes of SCLT. To obtain the proper parameter for lithography, we first start from the standard SCLT devices. The most important part is the fabrication of the base. We use three methods for fabricating the base. By using the best method, we succeeded in obtaining an optimized lithography parameter for producing good characteristic SCLT. With this, we design 24 SCLTs with the active area of 80µm2 on a 3cm×4cm glass substrate.