| 標題: | 二氧化鉿金屬橋樑電阻式記憶體之可靠度研究 Reliability Improvement in HfO2-Based Conductive Bridge Random Access Memory |
| 作者: | 黃楚傑 曾俊元 Huang, Chu-Jie Tseng, Tseung-Yuen 電子工程學系 電子研究所 |
| 關鍵字: | 二氧化鉿;金屬橋樑電阻式記憶體;Hafnium-Oxide;Conductive Bridge Random Access Memory |
| 公開日期: | 2016 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350167 http://hdl.handle.net/11536/138887 |
| Appears in Collections: | Thesis |
- Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access Memory / Zheng, Hao-Xuan;Shih, Chih-Cheng;Chang, Ting-Chang;Shih, Lin-Yi;Shih, Yao-Kai
- Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory / Singh, Pragya;Simanjuntak, Firman Mangasa;Kumar, Amit;Tseng, Tseung-Yuen
- 氮化矽薄膜應用於銅導電橋隨機存取記憶體之特性研究 / 藍順醴;Lan, Shun-Li;曾俊元;Tseng, Tseung-Yuen
- A numerical analysis of progressive and abrupt reset in conductive bridging RRAM / Berco, Dan;Tseng, Tseung-Yuen
- Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer Structure / Tsai, Tsung-Ling;Jiang, Fa-Shen;Ho, Chia-Hua;Lin, Chen-Hsi;Tseng, Tseung-Yuen
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