標題: Experimental Observation of Negative Capacitance Switching Behavior in One-Transistor Ferroelectric Versatile Memory
作者: Cheng, Chun-Hu
Chiu, Yu-Chien
Liou, Guan-Lin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ferroelectrics;HfZrO;negative capacitance;orthorhombic
公開日期: 1-Oct-2017
摘要: In this work, we investigated the negative capacitance behavior of novel ferroelectric versatile memory with low-voltage-driven and fast ferroelectric switching. The combined storage mechanism strengthened the stability of ferroelectric polarization by interface aligned dipoles. The simulation results of first principle calculation indicated that the monoclinic-like orthorhombic phase of ferroelectric hafnium oxide facilitated the occurrence of S-shaped negative capacitance behavior. Furthermore, the control of phase transition may affect ferroelectric property and negative capacitance effect during program and erase states.
URI: http://dx.doi.org/10.1002/pssr.201700098
http://hdl.handle.net/11536/143870
ISSN: 1862-6254
DOI: 10.1002/pssr.201700098
期刊: PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
Volume: 11
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