標題: Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors
作者: Chen, Guan-Fu
Chang, Ting-Chang
Chen, Hua-Mao
Chen, Bo-Wei
Chen, Hong-Chih
Li, Cheng-Ya
Tai, Ya-Hsiang
Hung, Yu-Ju
Chang, Kuo-Jui
Cheng, Kai-Chung
Huang, Chen-Shuo
Chen, Kuo-Kuang
Lu, Hsueh-Hsing
Lin, Yu-Hsin
交大-IBM智慧物聯網與巨量資料分析研發中心
關鍵字: Top gate TFTs;indium gallium zinc oxide (IGZO);dual channel;hump
公開日期: 1-三月-2017
摘要: This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.
URI: http://dx.doi.org/10.1109/LED.2017.2657546
http://hdl.handle.net/11536/144386
ISSN: 0741-3106
DOI: 10.1109/LED.2017.2657546
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 38
起始頁: 334
結束頁: 337
顯示於類別:期刊論文