標題: | Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors |
作者: | Chen, Guan-Fu Chang, Ting-Chang Chen, Hua-Mao Chen, Bo-Wei Chen, Hong-Chih Li, Cheng-Ya Tai, Ya-Hsiang Hung, Yu-Ju Chang, Kuo-Jui Cheng, Kai-Chung Huang, Chen-Shuo Chen, Kuo-Kuang Lu, Hsueh-Hsing Lin, Yu-Hsin 交大-IBM智慧物聯網與巨量資料分析研發中心 |
關鍵字: | Top gate TFTs;indium gallium zinc oxide (IGZO);dual channel;hump |
公開日期: | 1-三月-2017 |
摘要: | This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen. |
URI: | http://dx.doi.org/10.1109/LED.2017.2657546 http://hdl.handle.net/11536/144386 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2017.2657546 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 38 |
起始頁: | 334 |
結束頁: | 337 |
顯示於類別: | 期刊論文 |