標題: Conductive bridge random access memory characteristics of SiCN based transparent device due to indium diffusion
作者: Kumar, Dayanand
Aluguri, Rakesh
Chand, Umesh
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CBRAM;reliability;conduction mechanism;resistive switching
公開日期: 23-Mar-2018
摘要: In this work, the transparent bipolar resistive switching characteristics of a SiCN-based ITO/ SiCN/AZO structure due to In diffusion from ITO is studied. The SiCN based device is found to be 80% transparent in the visible wavelength region. This device, with AZO as both top and bottom electrodes, does not show any RRAM property due to deposition of the high quality O-2-free SiCN film. Replacing the AZO top electrode with ITO in this device results in good resistive switching (RS) characteristics with a high on/off ratio and long retention. Replacing the SiCN film with ZrO2 also results in excellent RS characteristics due to the formation of an oxygen vacancies filament inside the ZrO2 film. A resistance ratio of on/off is found to be higher in the SiCN based device compared to that of the ZrO2 device. Diffusion of In from ITO into the SiCN film on application of high positive voltage during forming can be attributed to the occurrence of RS in the device, which is confirmed by the analyses of energy dispersive spectroscopy and secondary-ion mass spectrometry. This study shows a pathway for the fabrication of CBRAM based transparent devices for non-volatile memory application.
URI: http://dx.doi.org/10.1088/1361-6528/aaa939
http://hdl.handle.net/11536/144515
ISSN: 0957-4484
DOI: 10.1088/1361-6528/aaa939
期刊: NANOTECHNOLOGY
Volume: 29
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