標題: Development of Bumpless Stacking With Bottom-Up TSV Fabrication
作者: Lee, Shih-Wei
Chen, Kuan-Neng
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: 3-D integration (3-D-I);bumpless stacking;through-silicon via (TSV)
公開日期: 1-四月-2017
摘要: A 3-D integration technology using bump less stacking based on a new bottom up Cu electroplating method without backside Cu chemical-mechanical planarization removal is presented in this paper. The approach successfully achieves via plating without thick Cu overburden by probing unique bottom electrodes for different I/O ports of TSV without additional steps in the conventional processes. The concepts and fabrication processes are described in detail. The results obtained from through silicon via (TSV) daisy chains show excellent electrical characteristics and good reliability in leakage current measurement. The proposed approach therefore has potential for low-cost via-last 3-D integration.
URI: http://dx.doi.org/10.1109/TED.2017.2657324
http://hdl.handle.net/11536/145331
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2657324
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 64
起始頁: 1660
結束頁: 1665
顯示於類別:期刊論文