標題: Crystal structure control of Au-free InAs and InAs/GaSb heterostucture nanowires grown on Si (111) by metal-organic chemical vapor deposition
作者: Kakkerla, Ramesh Kumar
Anandan, Deepak
Singh, Sankalp Kumar
Yu, Hung Wei
Lee, Ching-Ting
Dee, Chang-Fu
Majlis, Burhanuddin Yeop
Chang, Edward Yi
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2019
摘要: In this letter, the growth of gold-free GaSb on various InAs nanowire (NW) crystal structures using metal-organic chemical vapor deposition is demonstrated. The GaSb was grown radially and axially on wurtzite (WZ), zinc-blend (ZB) and polytype (mixture of WZ and ZB) InAs NWs. The effect of the various InAs crystal structures on GaSb was studied. This study demonstrates the control of the crystal growth of InAs and InAs/GaSb heterostructure NWs through the optimization of growth parameters and crystal transfer from core to shell, such techniques are necessary for the growth of NWs for future nanoelectronic device applications, such as TFET. (C) 2018 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/1882-0786/aaef40
http://hdl.handle.net/11536/148513
ISSN: 1882-0778
DOI: 10.7567/1882-0786/aaef40
期刊: APPLIED PHYSICS EXPRESS
Volume: 12
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